Annealing behavior of InAs/GaAs quantum dot structures |
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Authors: | Z. M. Wang S. L. Feng Z. D. Lu Q. Zhao X. P. Yang Z. G. Chen Z. Y. Xu H. Z. Zheng |
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Affiliation: | (1) National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, The Chinese Academy of Sciences, P.O.Box 912, 100083 Beijing, China |
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Abstract: | We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected. |
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Keywords: | Annealing InAs/GaAs quantum dots |
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