首页 | 本学科首页   官方微博 | 高级检索  
     

New dark current component of InGaAs/InP HPDs confirmed by DLTS
作者单位:Dept.of Electronic Engineering,Southeast University,Nanjing 210018,CHN
摘    要:NewdarkcurrentcomponentofInGaAs/InPHPDsconfirmedbyDLTSWANGKaiyuan,XUWeihong(Dept.ofElectronicEngineering,SoutheastUniversity,...


New dark current component of InGaAs/InP HPDs confirmed by DLTS
WANG Kaiyuan,XU Weihong. New dark current component of InGaAs/InP HPDs confirmed by DLTS[J]. Semiconductor Photonics and Technology, 1995, 0(Z1)
Authors:WANG Kaiyuan  XU Weihong
Abstract:
Keywords:Photodiodes  Characteristic Measurement  Dark Current  Tunnelling Current
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号