| 高隔离度宽频带MEMS双膜桥开关 |
| |
| 引用本文： | 蔡洁,廖小平,朱健.高隔离度宽频带MEMS双膜桥开关[J].半导体技术,2006,31(4):290-294. |
| |
| 作者姓名： | 蔡洁 廖小平 朱健 |
| |
| 作者单位： | 东南大学MEMS教育部重点实验室,南京,210096;东南大学MEMS教育部重点实验室,南京,210096;南京电子器件研究所,南京,210016 |
| |
| 摘 要： | 利用一种新型双边加直流驱动电极的电容耦合式MEMS并联膜开关与直接接触式并联膜开关进行级联,形成MEMS双膜开关.通过对其尺寸和结构的优化,降低开关阈值电压,Coventor软件模拟表明,开关的阈值电压小于20V;通过对其匹配设计改善开关的高频性能,HFSS软件模拟的结果表明,在DC～20GHz整个频带内,开关的插入损耗优于-0.1dB,反射损耗低于-30dB,隔离度低于-20dB,在 谐振点处隔离度能达到-40dB.
|
| 关 键 词： | MEMS 双膜桥 阈值电压 插入损耗 反射损耗 隔离度 |
| 文章编号： | 1003-353(2006)04-0290-05 |
| 收稿时间： | 2005-08-22 |
| 修稿时间： | 2005年8月22日 |
High Isolation MEMS Double Membranes Switches for Broadband Application |
| |
| CAI Jie,LIAO Xiao-ping,ZHU Jian.High Isolation MEMS Double Membranes Switches for Broadband Application[J].Semiconductor Technology,2006,31(4):290-294. |
| |
| Authors: | CAI Jie LIAO Xiao-ping ZHU Jian |
| |
| Affiliation: | 1.Key Laboratory of MEMS Ministry of Education, Southeast University, Nanjing 210096, China; 2.Nanjing Electronic Devices Institute, Nanjing 210016,China |
| |
| Abstract: | A double membranes switch,which composed of a capacitance MEMS shunt membrane switch and a DC contact MEMS shunt membrane switch are presented,both of the switches have DC drive pads.The pull-in voltage is lowed by the optimization of size and structure,and the pull-in voltage is less than 20V by Coventor Ware.The RF performance is improved by the structure matching design,and simulated by HFSS,at DC-20GHz,the insertion loss is <-0.1dB,and the retune loss is <-30dB,the isolation is <-20dB for the whole band,and at the resonance point,the isolation can reach-40dB. |
| |
| Keywords: | MEMS double membranes pull-in voltage insertion loss return loss isolation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
