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Pseudo-two-dimensional Poisson equation for the modeling of field-effect transistors |
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| Authors: | Hugues Marinchio Christophe Palermo Giulio Sabatini Luca Varani Pavel Shiktorov Evgeni Starikov Viktor Gružinskis |
| Affiliation: | 1. Institut d’électronique du Sud (UMR CNRS 5214), Université Montpellier 2, 34095, Montpellier, France 2. Semiconductor Physics Institute, A. Go?tauto 11, 2600, Vilnius, Lithuania |
| Abstract: | A modified Poisson equation able to take into account the influence of gates and a δ-doping in FETs and HEMTs is proposed. This equation can be solved self-consistently together with 1D transport equations along inhomogeneous transistor channels like those of the hydrodynamic or drift-diffusion approximations or with a Monte Carlo simulator used to describe carrier transport in n+nn+ structures. |
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