Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system |
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Authors: | L. Gao, P. H rter, Ch. Linsmeier, J. Gst ttner, R. Emling,D. Schmitt-Landsiedel |
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Affiliation: | aInstitute for Technical Electronics, Technical University Munich, Munich D-80333, Germany;bInstitute for Inorganic Chemistry, Technical University Munich, Garching, Germany;cMax-Planck-Institut für Plasmaphysik, EURATOM Association, Garching, Germany |
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Abstract: | Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt3)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO2/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO2/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO2 substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas. |
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Keywords: | Silver metallization MOCVD Direct liquid injection |
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