Single injection, double injection and negative resistance in gold-doped high-resistivity silicon |
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| Authors: | Wright G.T. Ibrahim A.F. |
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| Affiliation: | University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK; |
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| Abstract: | A simplified explanation is given for negative resistance in a semiconductor containing deep-lying donor and acceptor levels. A simple equation is derived for the breakover voltage and is verified by experimental studies of single and double-injection currents in gold-doped silicon. |
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