Stimulated emission from Ga1-xAlxAs diodes at 77°K |
| |
| Authors: | Rupprecht H. Woodall J. Pettit G. Crowe J. Quinn H. |
| |
| Affiliation: | IBM Watson Research Center, Yorktown Heights, NY, USA; |
| |
| Abstract: | Ga1-xAlxAs was found to be a suitable material for semiconductor lasers. Stimulated emission from Fabry-Perot type of diodes has been observed at 77°K and 273°K. The highest peak energy of the laser line at 77°K so far is 1.65 eV (l = 7500Å). The Ga1-xAlxAs material was obtained by a liquid phase epitaxial method, described in a previous paper. |
| |
| Keywords: | |
|
|
