N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source |
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Authors: | S Subbanna G Tuttle H Kroemer |
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Affiliation: | (1) Department of Electrical and Computer Engineering, University of California, 93106 Santa Barbara, CA |
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Abstract: | Lead telluride was used as a “captive” source of tellurium (Te) for the n-type doping of gallium antimonide (GaSb) and aluminum
antimonide (AlSb)grown by molecular beam epitaxy. Controllable carrier concentrations from 1.2 x 1016 to 1.6 x 1018 cm-3 were obtained. High room-temperature Hall mobilities of 4200 cm2/V · s were measured for the low-doped GaSb samples. In the growth temperature range of interest, doping ef-ficiencies are
approximately 50% of those in GaAs. For GaSb, SIMS data show that the Te incorporation decreases significantly at growth temperatures
above 500° C. How-ever, in AlSb, there is no significant reduction in the incorporation of Te up to at least 650° C. In contrast,
the Te incorporation into AlSb decreases at low temperatures. There is also some evidence of surface segregation in AlSb.
Contrary to other doping studies, increasing the Sb : Ga flux ratio was found to reduce the Te incorporation. |
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Keywords: | Gallium antimonide aluminum antimonide MBE tellurium doping |
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