Semiconductor lasers with internal wavelength selection |
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Authors: | V. V. Zolotarev A. Yu. Leshko A. V. Lyutetskii D. N. Nikolaev N. A. Pikhtin A. A. Podoskin S. O. Slipchenko Z. N. Sokolova V. V. Shamakhov I. N. Arsent’ev L. S. Vavilova K. V. Bakhvalov I. S. Tarasov |
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Affiliation: | 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
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Abstract: | Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The electroluminescence and stimulated emission spectra and light-current characteristics of diffraction-grating laser diodes have been studied. A substantial narrowing of both the luminescence and stimulated emission spectra was achieved due to the spectral selectivity of the grating. The maximum output optical power was 1 W at a drive current of 4 A. At the highest power, the lasing spectrum had a FWHM of ~2 Å. A narrowing of the lasing spectrum of the diffraction-grating laser by tens of times was demonstrated, compared with that of a laser with a Fabry-Perot cavity. |
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