| 一种改进的4H-SiC MESFET大信号解析模型 |
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| 引用本文： | 曹全君, 张义门,张玉明,. 一种改进的4H-SiC MESFET大信号解析模型[J]. 电子器件, 2007, 30(4): 1148-1151 |
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| 作者姓名： | 曹全君 张义门 张玉明 |
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| 作者单位： | 西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 提出了一种基于器件物理和结构参数并可直接应用于射频电路CAD工具的4H-SiC MESFET大信号解析模型.大信号模型基于4H-SiC MESFET的物理工作机理,源漏电流模型采用Materka的改进模型,沟道长度调制系数和饱和电压系数采用了栅源电压的一次函数建模;大信号电容模型采用电荷-电压(Q-V)的电容积分形式.该大信号模型已经应用在CAD工具中.模拟结果与实验结果符合良好,模型的有效性得到验证.
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| 关 键 词： | 4H-SiC MESFET 大信号 解析模型 射频 |
| 文章编号： | 1005-9490（2007）04-1148-04 |
| 修稿时间： | 2006-09-20 |
An Improved Large Signal Analytical Model for 4H-SiC MESFETs |
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| CAO Quan-jun,ZHANG Yi-men,ZHANG Yu-ming. An Improved Large Signal Analytical Model for 4H-SiC MESFETs[J]. Journal of Electron Devices, 2007, 30(4): 1148-1151 |
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| Authors: | CAO Quan-jun ZHANG Yi-men ZHANG Yu-ming |
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| Abstract: | Based on material parameters and the device structure of 4H-SiC MESFET,a novel large signal analytical model which can be directly used in RF circuit CAD tools is presented.The present model is based on the fundamental operation principle of 4H-SiC MESFET.An enhanced Materka drain current model which channel length modification coefficient and saturation voltage coefficient are modeled by a first order function of gate applied voltage is presented,and the capacitances are modeled by the expressions of Q-V(charge-voltage).The model has been applied to CAD tools.The simulation results have a good agreement with the measured data,and the validity of the present model is verified. |
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| Keywords: | 4H-SiC MESFET Large-signal Analytical model Radio Frequency |
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