| 变容二极管中子辐照损伤 |
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| 引用本文： | 陈盘训. 变容二极管中子辐照损伤[J]. 核电子学与探测技术, 1987, 0(2) |
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| 作者姓名： | 陈盘训 |
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| 作者单位： | 成都527信箱 |
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| 摘 要： | 在中子辐照环境下,变容二极管C—V特性发生变化,在给定偏置下,结电容随中子注量的增加而下降。它是因外延层中引入深俘获能级所致,在高中子注量下,漏电流和正向压降均变大,优值Q也发生变化。
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| 关 键 词： | 变容二极管 中子辐照损伤 C-V特性 深俘获能级 |
Neutron Radiation Damage of Varactor Diode |
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| Chen Panxun. Neutron Radiation Damage of Varactor Diode[J]. Nuclear Electronics & Detection Technology, 1987, 0(2) |
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| Authors: | Chen Panxun |
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| Abstract: | In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence. This resulted from introduction of deep-level traps in the epitaxial layer.At high neutron fluence, the junction leakge and the forward voltage drop increase and the Q-quality of varactor changes as well. |
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| Keywords: | Varactor diode Neutron radiation damage C-V characteristic Deep level trap |
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