Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology |
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| Authors: | Shih-Hung Chen Ming-Dou Ker |
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| Affiliation: | aESD and Product Engineering Department, SoC Technology Center Industrial Technology Research Institute, Taiwan;bNanoelectronics and Gigascale Systems Laboratory, Institute of Electronics National Chiao-Tung University, Taiwan |
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| Abstract: | The distance between active region and the seal-ring location has been investigated in a 0.25-μm CMOS process. From the experimental results, this distance can be shrunk to only 5 μm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT). |
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