An ion-implanted Schottky-barrier gate field-effect transistor |
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Abstract: | Techniques of fabricating an n-channel silicon field-effect transistor using phosphorus ion implantation and a platinum silicide Schottky-barrier gate (SB-FET) have been developed. The platinum silicide Schottky-barrier top gate is part of the contact metallization process. The phosphorus-doped channel is obtained by using a 50-keV ion-implanted predeposition and an 1100°C drive-in. A range of implantation doses and drive-in times were used to achieve various SB-FET characteristics. A threshold/pinchoff voltage range of +0.4 to -7.5 V has been obtained with typical spreads of approximately 0.1 V across the slice. A positive threshold voltage represents a SB-FET that is normally off and is turned on by a forward-biased gate. Results have been obtained for |
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