| CMP后清洗技术的研究进展 |
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| 引用本文： | 雷红. CMP后清洗技术的研究进展[J]. 半导体技术, 2008, 33(5): 369-373 |
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| 作者姓名： | 雷红 |
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| 作者单位： | 上海大学纳米科学与技术研究中心,上海,200444 |
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| 基金项目： | 国家自然科学基金 , 上海市教委第五期重点学科资助项目 |
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| 摘 要： | 化学机械抛光(CMP)技术是目前广泛采用的几乎唯一的高精度全局平面化技术,抛光后表面的清洗质量直接关系到CMP技术水平的高低.介绍了各种机械、物理及化学清洗方法与工艺技术优缺点,指出了清洗荆、清洗方式是CMP后清洗技术中的关键要素.综述了CMP后清洗技术的发展现状,分析了CMP后清洗存在的问题,并对其发展趋势进行了展望.
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| 关 键 词： | 化学机械抛光 原子级精度表面 清洗技术 |
| 文章编号： | 1003-353X(2008)05-0369-05 |
| 修稿时间： | 2007-12-04 |
Advances in Post-CMP Cleaning Technology |
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| Lei Hong. Advances in Post-CMP Cleaning Technology[J]. Semiconductor Technology, 2008, 33(5): 369-373 |
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| Authors: | Lei Hong |
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| Affiliation: | Lei Hong (Research Center of Nano-Science , Nano-Technology,Shanghai University,Shanghai 200444,China) |
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| Abstract: | Chemical mechanical polishing(CMP)is the only high precision and widely used finishing machining technology to date for surface global planarization.Post-CMP cleaning is one of the key factors influencing the CMP performances.The advantages and disadvantages of various mechanical,physical,chemical cleaning methods,and process are introduced.Detergent and cleaning method are the two main elements during post-CMP cleaning.The progress and problems of post-CMP cleaning are reviewed,and the trend of post-CMP cl... |
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| Keywords: | CMP atom-scale planarization surface cleaning technology |
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