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Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique |
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| Authors: | XianMing Wu Sh W Wang H Wang Z Wang S X Shang M Wang |
| Affiliation: | a State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, PR China b Department of Environment Engineering, Shandong University, Jinan 250100, PR China |
| Abstract: | Transparent and crack-free Bi2Ti2O7 thin films with strong (111) orientation were successfully prepared on n-Si(100) by chemical solution deposition (CSD) using bismuth nitrate and titanium butoxide as starting materials. The structural properties were studied by X-ray diffraction. The dielectric constant at 100 kHz at room temperature was 118 and loss factor was 0.074, for a 0.4-μm-thick film annealed at 500°C for 30 min. The leakage current density was 4.06×10?7 A/cm2 at an applied voltage of 15 V. |
| Keywords: | Annealing X-ray diffraction Electrical properties and measurements Resistivity |
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