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Phase changes in Gel Sb2Te4 films induced by single femtosecond laser pulse irradiation
引用本文:黄素梅 孙卓 靳彩霞 黄士勇 陈奕卫. Phase changes in Gel Sb2Te4 films induced by single femtosecond laser pulse irradiation[J]. 中国有色金属学会会刊, 2006, 16(B01): 226-231
作者姓名:黄素梅 孙卓 靳彩霞 黄士勇 陈奕卫
作者单位:Department of Physics, East China Normal University, Shanghai 200062, China
基金项目:Project(05PJ14037) supported by Foundations of Pujiang Talented Person Plans of Shanghai Science and Technology; Project(0519) supported by Shanghai-Applied Materials Research and Development Fund; Project(0552nm042) supported by the Shanghai Science and Technology Committee
摘    要:Phase transformations in a GelSb2Te4 system induced by a single femtosecond laser exposure were investigated. The system has a multilayer structure of air/10 nm ZnS--SiO2/80 nm GelSb2Te4/80 nm ZnS-SiO2/0.6 mm polycarbonate substrate. The morphology and contrast of marks written in both amorphous and crystalline backgrounds by single femtosecond pulses were characterized using an optical microscope. X-ray diffraction (XRD) was applied to identify the crystal structures transformed by single 108 fs shots. The characteristics and the conditions of phase transitions in the multilayer structure triggered by single shots were investigated. The pulse energy window for the crystallization in the GeiSb2Te4 system was established. The mechanism of phase change triggered by 108 fs laser pulses was discussed.

关 键 词:Ge1Sb2Te4薄膜 单飞秒激光脉冲辐照 相变化 结晶
收稿时间:2006-04-10
修稿时间:2006-04-25

Phase changes in Gel Sb2Te4 films induced by single femtosecond laser pulse irradiation
HUANG Su-mei , SUN Zhuo , JIN Cai-xia , HUANG Shi-yong, CHEN Yi-wei. Phase changes in Gel Sb2Te4 films induced by single femtosecond laser pulse irradiation[J]. Transactions of Nonferrous Metals Society of China, 2006, 16(B01): 226-231
Authors:HUANG Su-mei    SUN Zhuo    JIN Cai-xia    HUANG Shi-yong   CHEN Yi-wei
Abstract:
Keywords:femtosecond laser   phase change   optical recording   amorphization   crystallization
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