直拉重掺硼硅单晶的研究进展 |
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引用本文: | 李春龙,沈益军,杨德仁,马向阳,余学功,阙端麟. 直拉重掺硼硅单晶的研究进展[J]. 稀有金属, 2003, 27(3): 357-360 |
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作者姓名: | 李春龙 沈益军 杨德仁 马向阳 余学功 阙端麟 |
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作者单位: | 浙江大学硅材料国家重点实验室,浙江,杭州,310027 |
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摘 要: | 系统介绍了直拉重掺硼(B)硅单晶研究的最新进展。主要内容包括重掺B硅单晶的基本性质,利用重掺B籽晶进行无缩颈硅单晶生长技术,重掺B硅单晶的机械性能,重掺B硅单晶中的氧和氧沉淀,以及B的大量掺杂与大直径直拉硅单晶中空洞型(Void)原生缺陷的控制关系。在此基础上,探讨了当前直拉重掺B硅单晶生产和研究中存在的主要问题。
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关 键 词: | 直拉硅 重掺硼 氧 缩颈 |
文章编号: | 0258-7076(2003)03-0357-04 |
修稿时间: | 2002-04-01 |
Heavily Boron Doped Czochralski Silicon |
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Abstract: | The recent development in heavily B doped CZ silocon was reviewed. The dislocation free crystal growth based on heavily B doped seeds without Dash necking was introduced. The mechanical properties, the oxygen and the void defects of heavily B doped Czochralski silicon were also discussed. Furthermore, some issues to be investigated for heavily B doped silicon were proposed. |
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Keywords: | czochralski silicon heavily B doped oxygen dash necking |
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