Cu掺杂ZnO薄膜光学性质的研究

为了制备结晶质量好的Cu掺杂ZnO薄膜,研究其结构和光学性质,采用脉冲激光沉积方法,在Si衬底上选择不同的衬底温度来制备薄膜。实验成功制得了结晶质量较好的Cu掺杂ZnO薄膜。利用X射线衍射仪、扫描电子显微镜和荧光分光光度计对样品进行了测量和分析。所制备的样品均表现出高度的c轴择优取向,衬底温度为300℃时,薄膜表面形貌均匀致密;在样品的光致发光谱中,发现样品除了在380nm附近出现紫外发光峰外,在460nm附近出现了蓝光发光峰,真正意义上实现了ZnO薄膜的蓝光发射。结果表明,衬底温度对其晶体质量有较大影响。

Optical characteristics study of the Cu-doped ZnO thin films

In order to prepare good crystalline quality of Cu-doped ZnO thin films and study its structure,the film was prepared by means of the pulsed laser deposition method with the Si substrate at different temperatures.In experiments a better crystal quality of Cu-doped ZnO thin film was prepared successfully.The specimens were measured and analyzed by means of Xray diffraction,scanning electron microscopy and photoluminescence spectrum.It was found that the prepared specimens appeared highly c-axis oriented,and the surface morphology of thin film was uniform and dense with the substrate at 300℃.In their photoIuminescence spectrums,besides the peak UV luminescence around 380nm,there was a peak blue light-emitting band around 460nm,which made it possible to emit blue light with ZnO films in practice.The results show that the crystal quality is seriously dependent on the growth temperature.