On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface |
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| Authors: | S Yu Davydov O V Posrednik |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) St. Petersburg State Electrotechnical University (LéTI), St. Petersburg, 197376, Russia |
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| Abstract: | The coupling between levels related to silicon and carbon vacancies with metal states is considered in the surface molecule approximation. It is shown that the key role of silicon vacancies in the formation of a Schottky barrier at the Cr-SiC interface is due to the high density of states at the antibonding level. |
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