| 纵向磁场拉制硅单晶的工艺研究 |
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| 引用本文： | 宋大有,褚祥康,周禧,金建民,曹志艺,曹国琛. 纵向磁场拉制硅单晶的工艺研究[J]. 有色金属材料与工程, 1988, 0(3) |
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| 作者姓名： | 宋大有 褚祥康 周禧 金建民 曹志艺 曹国琛 |
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| 作者单位： | 上海有色金属研究所，上海有色金属研究所，上海有色金属研究所，上海有色金属研究所，上海有色金属研究所，上海有色金属研究所 |
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| 摘 要： | 用常规CZ法拉制的硅单晶质量与VLSI对材料的要求有较大差距。MCZ法可以抑制硅熔体的热对流,因而改变了硅单晶的氧含量和其他性能。作者采用VMCZ法详细地研究了磁场对硅熔体波动、温度起伏的影响,进而研究了磁场对热场分布、磁场对硅单晶中杂质的分布、磁场对硅单晶中氧、碳含量、磁场对硅单晶中微缺陷等的影响。发现:VMCZ的结果与资料报导的HMCZ数据相比有较大差别。通过调整拉晶参数也只能有限度地改善硅单晶的性能。
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| 关 键 词： | 硅单晶 磁场 CZ法 热对流 微缺陷 |
Study on Process for Pulling Silicon Single Crystals in a Vertical Magnetic Field |
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| Song Dayou Zhu Xiangkang Zhou Xi Jin Jianmin Cao Zhiyi and Cao Guochen. Study on Process for Pulling Silicon Single Crystals in a Vertical Magnetic Field[J]. Nonferrous Metal Materials and Engineering, 1988, 0(3) |
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| Authors: | Song Dayou Zhu Xiangkang Zhou Xi Jin Jianmin Cao Zhiyi and Cao Guochen |
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| Affiliation: | Shanghai Nonferrous Metals Research Institute |
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| Abstract: | The quality of silicon single crystals grown by the conventional Czochralski process can not by far meet the requirements of VLSI materials. MCZ process can effectively suppress the thermal convection in silicon melt and thus change the oxygen content in the single crystals and improve their properties. Experiments are carried out by VMCZ process to investigate the effect of magnetic fields on turbulence and temperature fluctuations of the melt, and furthermore the effect on impurity distribution, oxygen and carbon content and micro defeets in the crystals. It is found that the results by VMCZ process are widely different from the reported results by HMCZ process and even intentional adjustment of process parameters can only improve the properties of crystals to a limited extent. |
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| Keywords: | Single silicon crystal Magnetic field Czochralski process Thermal convection Micro defect. |
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