Improving the radiation resistance of semiconductor detectors of radioactive radiation

The possibility of using semiconductor detectors not containing potential barriers (p-n junctions) to measure the intensity radioactive radiation fluxes causing degradation of the electric parameters of detector material is theoretically substantiated. The assumptions are confirmed by experimental results.Translated from Izmeritel'naya Tekhnika, No. 1, pp. 61–63, January, 1994.