基于3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole(TAZ)制备的薄膜电阻的磁效应

讨论了采用热蒸镀方法制备的结构为ITO/β-NPB(55-xnm)/Alq3(45nm)/TAZ(xnm)/LiF(0.5nm)/Al的器件的磁效应。在室温下研究了x分别取0、5、10、15nm时器件的电阻率与磁场之间的变化关系。结果表明,x=0nm时,在10V电压下,电阻率变化率Δρ/ρ随磁场强度的增大而增大;当磁场强度B=110mT时,Δρ/ρ达到最大,仅为8.22%。当x分别取5、10、15nm时,Δρ/ρ为随磁场的增大而减小;在相同磁场强度下,x越大,Δρ/ρ越大;当B=110mT,x=15nm,电压为10V时,Δρ/ρ的数值达到最大,为-16.92%。

Magnetic field effects of film resistance based on 3-(4-Biphenylyl)-4-phenlyl-5-tert-butyl-phenyi-1,2,4-triazole

Magnetoresistance measurement of indium tin oxide/N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine(NPB)/ Tris(8-hydroxy-quinolinato) aluminum(Alq3)/3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole(TAZ)/LiF/aluminum OLED structures have been made as a function of magnetic field at room temperature.The MR is defined as MR=Δρ/ρ=[ρ(B)-ρ(0)] /ρ(0).It has been found that that the Δρ/ρ increases with increasing magnetic field strength from 0 mT to 110 mT with TAZ thickness of 0 nm at 10 V,which maximal value is 8.22% at about 110 mT.The external magnetic filed can decrease the Δρ/ρ in devices with TAZ thickness from 5 nm to 15 nm.This is because the magnetic field can reduce the singlet polaron pairs converted into triplet polaron pairs due to Zeeman splitting and can lead to an increase in singlet polarons and a decrease in triplet polarons.Furthermore,the Δρ/ρ increases while TAZ thickness is increasing at same magnetic filed strength.When an external magnetic field is 110 mT,the Δρ/ρ is found to increase by up to-16.92% with TAZ thickness of 15 nm at 10 V.