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TiS3 Transistors with Tailored Morphology and Electrical Properties

Authors:	Joshua O. Island Mariam Barawi Robert Biele Adrián Almazán José M. Clamagirand José R. Ares Carlos Sánchez Herre S. J. van der Zant José V. Álvarez Roberto D'Agosta Isabel J. Ferrer Andres Castellanos‐Gomez

Affiliation:	1. Kavli Institute of Nanoscience, Delft University of Technology, CJ, Delft, The Netherlands;2. Materials of Interest in Renewable Energies Group (MIRE Group), Dpto. de Física de Materiales, Universidad Autónoma de Madrid, UAM, Madrid, Spain;3. ETSF Scientific Development Center, Departamento de F?sica de Materiales, Universidad del Pa ís Vasco, San Sebastian, Spain;4. Dpt. Física de la Materia Condesada, Univ. Autónoma de Madrid, Madrid, Spain;5. Inst. Nicolas Cabrera, Univ. Autónoma de Madrid, Madrid, Spain;6. IFIMAC, Univ. Autónoma de Madrid, Madrid, Spain;7. IKERBASQUE, Basque Foundation for Science, Bilbao, Spain;8. Instituto Madrile?o de Estudios Avanzados en Nanociencia (IMDEA‐Nanociencia), Madrid, Spain

Abstract:

Keywords:	density functional theory exfoliation potential field‐effect transistors mechanical exfoliation monolayers morphology sulphur vacancy TiS3