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Experimental study of surface channel in insulated-gate field-effect transistor |
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| Authors: | Bandali MB Wright GT |
| Affiliation: | University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK; |
| Abstract: | A simple experimental technique is described for measuring the effective channel length and the surface-channel drift mobility in the insulated-gate field-effect transistor. Experimental results are presented for p channel transistors made in 8 ? cm silicon. |
| Keywords: | |