A study of microstructural and optical properties of nanocrystalline ceria thin films prepared by pulsed laser deposition |
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Authors: | G Balakrishnan S Tripura SundariP Kuppusami P Chandra MohanMP Srinivasan E MohandasV Ganesan D Sastikumar |
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Affiliation: | a Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research,Kalpakkam-603 102, Indiab Department of Physics, National Institute of Technology, Tiruchirapalli-620015,Indiac Department of Physics, PERI Institute of Technology, Chennai-600048, Indiad Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research,Kalpakkam-603 102, Indiae Water and Steam Chemistry Division, BARCF, Kalpakkam-603 102, Indiaf UGC-DAE Consortium for Scientific Research, Indore-452017, India |
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Abstract: | Thin films of cerium oxide (CeO2) have been deposited on (100) Si substrates using pulsed laser deposition technique at various substrate temperatures from room temperature (RT) to 973 K at an optimized oxygen partial pressure of 3 Pa. Structural, morphological and optical properties have been carried out using X-ray diffraction (XRD), Raman, ellipsometry and atomic force microscopy techniques. XRD results showed that the deposited films are polycrystalline with cubic structure. At room temperature, the film showed preferred orientation along (111) plane, while at higher temperatures, it exhibited preferred orientation along (200). The crystallite sizes were calculated and were found to be in the range 17-52 nm. The texture coefficient for (200) reflection increased until 573 K, and then decreased in the temperature range 673-973 K. The Raman peak appeared at 463 cm− 1 due to the F2g active mode also confirmed the formation of CeO2 with a cubic structure. There was a systematic variation in the Raman peak intensity, frequency shift and line broadening with the increase of temperature. The ellipsometry studies showed that the refractive index and band gap increased from 2.2 to 2.6 and 3.4 to 3.6 eV, respectively with increasing substrate temperature from RT to 973 K. |
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Keywords: | X-ray diffraction Thin films Cerium oxide Pulsed laser deposition Ellipsometry |
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