Photoluminescence and spin relaxation of MnZnO/GaN-based light-emitting diodes

This study investigates the spin relaxation of GaN-based light-emitting diodes with an MnZnO film by examining its photoluminescence (PL) and time-resolved magnetization modulation photoluminescence. PL measurements reveal that the application of a magnetic field produced a clear difference between the intensities of the right (σ⁺) and left (σ⁻) circular polarization components. The circular polarization was identified as P_circ = [I(σ⁺) − I(σ⁻)] / [I(σ⁺) + I(σ⁻)], where I(σ⁺) and I(σ⁻) are the intensities of the σ⁺ and σ⁻ components, respectively. The PL polarization was 3.6% in a 0.5 T magnetic field. In a magnetic field, the photo-ionized lifetime and spin-polarized lifetime values were approximately 13.64 and 54.54 ns, respectively. The right-circular-spin-polarization lifetime and the left-circular-spin-polarization lifetime values were about 39.09 and 40.01 ns, respectively.