Structural,optical and electrical characterization of ZnO:Ga thin films for organic photovoltaic applications |
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| Authors: | Zhong Zhi You Gu Jin Hua |
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| Affiliation: | 1. College of Electronic Information Engineering, South-Central University for Nationalities (SCUN), Wuhan 430074, People''s Republic of China;2. Center of Computing and Experimenting, South-Central University for Nationalities (SCUN), Wuhan 430074, People''s Republic of China;1. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu, India;2. Department of Electronics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu, India;1. Laboratory of Information Service & Intelligent Control, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China;2. University of Chinese Academy of Sciences, Beijing 100039, China;3. School of Computer Science and Software, Tianjin Polytechnic University, Tianjin 300387, China;1. Research Centre of Materials Science, Beijing Institute of Technology, Beijing 100081, People''s Republic of China;2. National Institute for Biotechnology and Genetic Engineering (NIBGE), P.O. Box No. 577, Jhang Road, Faisalabad, Pakistan;3. Department of Chemistry, SBA School of Science & Engineering (SSE), Lahore University of Management Sciences (LUMS), DHA, Lahore Cantt 54792, Pakistan |
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| Abstract: | Gallium-doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by RF magnetron sputtering. The effect of growth temperature on microstructure, optical and electrical properties of the films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (002) oriented, and that the growth temperature significantly affects the microstructure and optoelectrical properties of the films. The film deposited at 670 K has the largest grain size of 71.9 nm, the lowest resistivity of 8.3 × 10? 4 Ω?cm and the highest figure of merit of 2.1 × 10? 2 Ω? 1. Furthermore, the optical energy gaps and optical constants were determined by optical characterization methods. The dispersion behavior of the refractive index was also studied using the Sellmeir's dispersion model and the oscillator parameters of the films were obtained. |
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