Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO2)0.2 charge trapping layer |
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| Authors: | Zhenjie Tang Hanni Xu Haitao Li Yan Chen Yidong Xia Jiang Yin Xinhua Zhu Zhiguo Liu Aidong Li Feng Yan |
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| Affiliation: | 1. Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, PR China;2. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, PR China;3. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, PR China;1. Instituto de Ciência e Tecnologia, Universidade Federal de Alfenas, Rodovia Rodovia José Aurélio Vilela, 11999, 37715-400 Poços de Caldas, MG, Brazil;2. Laboratório de Combustão e Propulsão, Instituto Nacional de Pesquisas Espaciais, Rodovia Presidente Dutra, Km 40—Centro, 12630-000 Cachoeira Paulisra, SP, Brazil;1. Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, P.R. China;2. Key Laboratory of Advanced Functional Materials, School of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, P.R. China;1. International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, Shaanxi 710072, PR China;2. Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, Shaanxi 710072, PR China;1. University of Padova, Italy;2. INFN of Padova, Italy;3. UC Santa Cruz, CA, USA;4. CERN CH-1211, Geneva 23, Switzerland;5. MIND-MicroTechnologies-Bât, Archamps, France;6. INFN of Torino, Italy;7. DICEM, Università di Cassino, Italy |
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| Abstract: | Charge trapping memory capacitors using (ZrO2)0.8(SiO2)0.2 film as charge trapping layer and amorphous Al2O3 as the tunneling layer and blocking layer were fabricated for nonvolatile semiconductor memory application. The ZrO2 nanocrystallites with a size of 3–5 nm precipitated from amorphous (ZrO2)0.8(SiO2)0.2 during rapid thermal annealing at 800 °C can serve as the storage nodes, with which a large hysteresis memory window of 7.5 V at a sweeping gate voltage of 8 V has been achieved. At 150 °C bake temperature, the memory capacitor exhibited an excellent endurance up to 105 write/erase cycles, after which a small charge loss of about 12% was achieved. |
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