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GaN nanowires grown on silicon substrates engraved using stainless-steel micro-tip
Authors:S Dhamodaran  D Sathish Chander  J Ramkumar
Affiliation:1. Department of Physics, Indian Institute of Technology Kanpur, 208016, India;2. Department of Mechanical Engineering, Indian Institute of Technology Kanpur, 208016, India;1. Recep Tayyip Erdo?an University, Faculty of Engineering, Department of Nanotechnology, 53100 Rize, Turkey;2. Atatürk University, Kaz?m Karabekir Education Faculty, Department of Physics, 25240 Erzurum, Turkey;3. Department of Electrical and Electronics Engineering, Faculty of Engineering and Architecture, Balikesir University, Balikesir 10145, Turkey;1. Department of Mechanical and Industrial Engineering, Northeastern University, 360 Huntington Avenue, Boston, MA 02115, USA;2. Biomedical Systems Engineering, Charles Stark Draper Laboratory, 555 Technology Square, Cambridge, MA 02139, USA;1. Department of Physics, N.M.S.S.V.N College, Madurai, Tamilnadu-625019, India;2. Department of Physics & Nanotechnology, SRM University, Chennai, Tamilnadu-603203, India;1. State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China;2. State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Abstract:GaN nanostructures have been synthesized on silicon substrates using chemical vapor deposition. Prior to growth silicon substrates were engraved using stainless-steel micro-tips. Straight as well as twisted nanowires were observed along the engraved lines/regions. Straight nanowires were few tens of microns in length and the twisted ones were few microns in length with diameter variation between 30 nm and 100 nm. The electron microscopy analysis indicates that the nanowires were grown parallel to the c-axis and possible growth mechanism is described. Raman scattering indicates good quality of nanowires exhibiting intense E2(high) mode and A1(LO) mode and a huge red-shift in the mode position indicates nano-size effects. Such engraved substrates without any explicit catalyst can provide site controlled growth of nanowires and this methodology is extendable for growing nanowires of related materials.
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