Influence of SnO2 coating and annealing on the luminescence properties of porous silicon nanowires |
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| Authors: | Changhyun Jin Hyunsu Kim Chanseok Hong Sunghoon Park Chongmu Lee |
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| Affiliation: | 1. Lomonosov Moscow State University, Department of Physics, Leninskiye Gory 1, 119991 Moscow, Russian Federation;2. Institute for Biological Instrumentation of Russian Academy of Sciences, 142290 Pushchino, Moscow Region, Russian Federation;3. Leibniz Institute of Photonic Technology Jena - Member of the Research Alliance “Leibniz Health Technologies”, Albert-Einstein-Str. 9, 07745 Jena, Germany;4. Friedrich Schiller University Jena, Institute of Physical Chemistry and Abbe Center of Photonics, Helmholtzweg 4, 07745 Jena, Germany;5. Research Campus Infectognostic, Philosophenweg 7, 07743 Jena, Germany;6. Cryogenic Research Division, Scientific-Practical Materials Research Centre NAS of Belarus, P. Brovki Str. 19, 220072 Minsk, Belarus;7. Department of Electronic Materials Technology, National University of Science and Technology MISiS, 119049 Moscow, Russia;8. Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, 121205 Moscow, Russian Federation;9. Russian Quantum Center, Novaya Str. 100, 143025 Moscow, Russian Federation;10. Moscow Institute of Physics and Technology, Institutskiy Pereulok 9, 141701 Dolgoprudny, Russian Federation;1. School of Mechanical Engineering, Shiraz University, Shiraz 71963-16548, Iran;2. Department of Medical Physics and Biomedical Engineering, Research Center for Medical Nanotechnology and Tissue Engineering, Shahid Beheshti University of Medical Sciences, Evin, Tehran, Iran;3. Computational Physical Sciences Research Laboratory, School of Nano-Science, Institute for Research in Fundamental Sciences (IPM), Tehran, Iran;1. Physics Department, University of Shahrood, Shahrood, Iran;2. Iranian National Center for Laser Science and Technology, Tehran, Iran;1. Punjab Engineering College (Deemed to be University), Chandigarh, India;2. Amity Institute of Applied Sciences, Amity University, Noida, India;1. Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El-Manar, 2092 Campus Universitaire Tunis, Tunisia;2. Faculté des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Université de Carthage, Tunisia;3. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, BP 95, Hammam-Lif 2050, Tunisia |
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| Abstract: | Porous silicon (PS)-core/SnO2-shell nanowires (NWs) were synthesized by a two step process: electrochemical anodization of silicon followed by atomic layer deposition of SnO2. The photoluminescence spectrum of the PS nanowires showed a broad blue green emission band centered at approximately 510 nm. PL measurement also showed that the blue green emission was enhanced by SnO2 coating and enhanced further by thermal annealing. It appeared that annealing in a reducing atmosphere was more efficient in increasing the blue green emission intensity than annealing in an oxidizing atmosphere. Energy-dispersive X-ray spectroscopy revealed that the enhancement in the blue green emission by annealing in a reducing atmosphere was attributed to the formation of Sn interstitials in the PS cores due to the dissociation of the SnO2 shells followed by the diffusion of the Sn atoms, generated as a result of the dissociation of SnO2, into the PS cores during the annealing process. |
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