Optimum design of δ-doped InGaAs avalanche photodiode byusing quasi-ionization rates |
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| Authors: | Ito M Mikawa T Wada O |
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| Affiliation: | Fujitsu Lab. Ltd., Atsugi; |
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| Abstract: | An avalanche photodiode (APD) designed by using quasi-ionization rates in InP and InGaAs is described. The structure has a δ-doped layer in an InP window layer. The heterointerface electric field is investigated and determined to prevent the tunneling current and carrier multiplication in InGaAs. The gain bandwidth (GB) product of the δ-doped APD is analyzed by R.B. Emmons's (1967) p-i-n electric field method. The highest GB product is 160 GHz |
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