| 半导体衬底片的应力损伤及其行为 |
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| 引用本文： | 罗江财. 半导体衬底片的应力损伤及其行为[J]. 半导体光电, 1989, 10(3): 78-81,88 |
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| 作者姓名： | 罗江财 |
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| 作者单位： | 重庆光电技术研究所 |
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| 摘 要： | 本文根据实际测量结果,一叙述了半导体衬底制片质量对外延生长的影响。特别是,讨论了在 GaAs、InP 衬底中,产生于切片、研磨和抛光加工过程中的机械损伤的影响。
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| 关 键 词： | 半导体 衬底 应力损伤 外延生长 |
Stress Damages and Actions of Substrate Wafers |
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| Luo Jiangcai Chongqing Optoelectronics Research Institute. Stress Damages and Actions of Substrate Wafers[J]. Semiconductor Optoelectronics, 1989, 10(3): 78-81,88 |
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| Authors: | Luo Jiangcai Chongqing Optoelectronics Research Institute |
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| Affiliation: | Luo Jiangcai Chongqing Optoelectronics Research Institute |
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| Abstract: | Based on actual measurement results,the influence of process quali- ty of semiconductor substrate wafers on epitaxial growth is described.In particular,the effect of mechanical damagec resulted from slicing,grinding and polishing process on the quality of GaAs,lnP substrates is discussed |
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| Keywords: | Stress Damages of Semiconductor Epitaxial Growth |
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