SiOF and SiO2 deposition in a HDP reactor: tool characterization and film analysis |
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| Authors: | D.J Den Boer H Fukuda J Helmig J.B.C Van Der Hilst G.C.A.M Janssen A.J Kalkman S Radelaar |
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| Affiliation: | aDimes, Delft University, PO Box 5046, 2600 GA Delft, The Netherlands;bASM Japan K.K., 23-1, 6-Chome Nagayama, Tama-shi, Tokyo 206, Japan;cLaboratory of Material Science, Delft University, Delft, The Netherlands |
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| Abstract: | A high density plasma chemical vapour deposition (HDP CVD) system based on electron cyclotron resonance (ECR) plasma excitation for deposition of inter metal dielectric (IMD) is presented. With the system deposition of SiO2 and SiOF has been performed. The influence of pressure, Ar content in the flow, total flow, bias voltage, microwave power on gap fill capability and growth rate has been investigated. A figure of merit, the product of gap filling capability and growth rate is defined. In addition measurements of the uniformity of the composition over the wafer of the deposited SiO2 and SiOF layers were performed. The dielectric constant of the layers was measured on SiOF films with different composition. The stability of these SiOF films was also analysed. This was done by treating the films with moisture and measuring composition before and after this treatment. |
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| Keywords: | Dielectric films Chemical vapor deposition Electron cyclotron resonance Semiconducting silicon compounds Silica Semiconductor growth High density plasma chemical vapor deposition (HDP CVD) reactors |
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