Influence of O2 pressure on the properties of heavily-doped ZnO:Sb thin films grown by pulsed laser deposition |
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| Authors: | X Q Gu L P Zhu |
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| Affiliation: | 1. School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou, 221116, People’s Republic of China
2. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People’s Republic of China
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| Abstract: | Heavily Sb-doped ZnO films were deposited on the glass substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) and photoelectron spectroscopy (XPS) were employed to characterize their microstructures and chemical valence states. Transmittance spectra and Hall measurements were used to evaluate their optical and electrical properties. It was found that the as-prepared ZnO:Sb thin films showed a single-hexagonal-phase structure, with the optical band gap tuning from 3.33 to 3.11 eV. The variation in the band gap was attributed to a large co-axis strain in the alloy films induced by Sb incorporation. Besides, the alloy films showed a semi-insulated characteristic with high resistivity of ~104 Ω cm, which was possibly related to a compensation of intrinsic defects. |
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