Investigation of nanostructured silicon as a candidate for heat sensitive material

Nanoscale pores are fabricated on the surface of silicon by simple metal-assisted etching process. The resistance of nanostructured silicon depends obviously on temperature. The temperature coefficient of resistance is ?2.835 %/°C, which is as large as that of some heat sensitive materials, for instance vanadium oxide, amorphous silicon, used for uncooled infrared (IR) detectors. Considering with the enhanced near-IR absorption of nanostructured silicon, it is demonstrated that nanostructured silicon can be a promising heat sensitive material for uncooled IR detection. The sheet carrier concentration is slightly reduced, whereas carrier mobility is drastically decreased from 367.5 to 273.7 cm² V^?1 s^?1 after nanostructuring process.