| 薄膜电子隧穿几率的数值计算方法 |
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| 引用本文： | 张虹霞,唐祯安. 薄膜电子隧穿几率的数值计算方法[J]. 微电子学, 2004, 34(3): 261-264 |
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| 作者姓名： | 张虹霞 唐祯安 |
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| 作者单位： | 大连理工大学,电子系,微系统研究中心,辽宁,大连,116024 |
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| 基金项目： | 国家自然科学基金资助项目(90207003) |
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| 摘 要： | 文章对电子透射几率问题进行了数值求解，这种方法能够处理形状复杂的一维势垒。首先利用龙格一库塔法和Numerov方法，联立求解薛定谔方程，然后利用得到的结果计算电子的透射几率，并考虑了计算误差的影响和减小方法。将该方法得到的数值解与精确值进行了比较，并用此方法考虑了不同双势垒结构中的共振隧穿问题。
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| 关 键 词： | 电子隧穿 数值计算 薛定谔方程 |
| 文章编号： | 1004-3365(2004)03-0261-04 |
A Numerical Solution of Electron Tunneling in Thin Films |
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| ZHANG Hong-xia,TANG Zhen-an. A Numerical Solution of Electron Tunneling in Thin Films[J]. Microelectronics, 2004, 34(3): 261-264 |
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| Authors: | ZHANG Hong-xia TANG Zhen-an |
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| Abstract: | Numerical solution of electron tunneling in thin films is presented. This method can be used to calculate one-dimensional barriers with complicated shapes. Schroedinger equation is numerically solved with Runge-Kutta and Numerov algorithm. Based on the results, electron transmission coefficient is obtained by taking into account the effect of computational errors and error reductions. The calculated result is compared with that from the precise analytical method. The resonance electron tunneling in different double-barrier structures is also discussed. |
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| Keywords: | Electron tunneling Numerical computation Schroedinger equation |
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