Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis |
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Authors: | Okuno Hanako Takeguchi Masaki Mitsuishi Kazutaka Guo Xing J Furuya Kazuo |
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Affiliation: | National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003, Japan. |
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Abstract: | In this work, a detailed TEM sample preparation recipe based on a wedge polishing technique for GaN-based materials is presented. The obtained samples have atomically flat surfaces without any obvious surface damages such as the formation of amorphous layers. A composition estimation of Al(x)Ga(1-x)N from Z-contrast STEM imaging is carried out using these samples. The results are in good accord with the nominal composition. |
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