Electrical Resistivity Behavior and VRH Transport Mechanism in Semiconducting La0.6Sr0.4Mn1?2x
Fe
x
Cr
x
O3 (0.10≤x≤0.25) Manganites |
| |
Authors: | Sonia Ben Abdelkhalek Nabil Kallel Sami Kallel Thierry Guizouarn Octavio Peña Mohamed Oumezzine |
| |
Affiliation: | 1. Laboratoire de Physico-chimie des Matériaux, Département de Physique, Faculté des Sciences de Monastir, BP 22, 5019, Monastir, Tunisia 2. Institut des Sciences Chimiques de Rennes, UMR 6226-CNRS, Université de Rennes 1, 35042, Rennes Cedex, France
|
| |
Abstract: | The transport properties and conduction mechanism in La0.6Sr0.4Mn1?2x Fe x Cr x O3 (0≤x≤0.3) have been investigated. The undoped samples show metal–semiconductor transition with a peak of resistivity at a temperature T P , whereas for all doped compounds the semiconducting behavior persists in the whole temperature range. The insertion of Cr3+ and Fe3+ ions leads to the increase of resistivity because the simultaneous substitution of Fe3+ and Cr3+ for Mn3+ reduces the number of available hopping sites for the Mn e g↑ electron and suppresses the double-exchange mechanism. It was found that the transport mechanism for substituted samples is dominated by the variable range hopping of small polarons between localized states in a model where the various parameters estimated from Mott’s relation obey the variable range hopping (VRH) mechanism. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|