Highly conductive p + + ‐AlGaAs/n + + ‐GaInP tunnel junctions for ultra‐high concentrator solar cells

Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra‐high concentration applications. We have developed a highly conductive, high bandgap p ^{+ +} ‐AlGaAs/n ^{+ +} ‐GaInP tunnel junction with a peak tunneling current density for as‐grown and thermal annealed devices of 996 A/cm ² and 235 A/cm ², respectively. The J–V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra‐high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice‐matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm ² with respect to previous designs. Copyright © 2014 John Wiley & Sons, Ltd.