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| Authors: | Magnus T. Borgström Jesper Wallentin Johanna Trägårdh Peter Ramvall Martin Ek L. Reine Wallenberg Lars Samuelson Knut Deppert |
| Affiliation: | (1) State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, 030001 Taiyuan, People’s Republic of China;(2) Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1595, USA;(3) Graduate University of the Chinese Academy of Sciences, 100039 Beijing, People’s Republic of China; |
| Abstract: | We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.  |
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