Isotype surface-barrier n-TiN/n-Si heterostructure

n-TiN/n-Si heterostructures are prepared by reactive magnetron sputtering. The current-voltage characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and the series resistance of the heterojunction are analyzed. The energy-band diagram for the heterojunctions under study is constructed. The concentration of heterojunction surface states is estimated to be 2.67 × 10¹³ cm^?2. It is established that the dominant mechanisms of current transport through forward- and reverse-biased n-TiN/n-Si heterojunctions are described well within the tunnel and emission models.