Isotype surface-barrier n-TiN/n-Si heterostructure |
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Authors: | M N Solovan V V Brus P D Maryanchuk |
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Affiliation: | 1. Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine
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Abstract: | n-TiN/n-Si heterostructures are prepared by reactive magnetron sputtering. The current-voltage characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and the series resistance of the heterojunction are analyzed. The energy-band diagram for the heterojunctions under study is constructed. The concentration of heterojunction surface states is estimated to be 2.67 × 1013 cm?2. It is established that the dominant mechanisms of current transport through forward- and reverse-biased n-TiN/n-Si heterojunctions are described well within the tunnel and emission models. |
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