纳米CMOS低噪声放大器的研究 |
| |
引用本文: | 王国波,张流强,夏华灿.纳米CMOS低噪声放大器的研究[J].纳米科技,2008,5(2):23-26. |
| |
作者姓名: | 王国波 张流强 夏华灿 |
| |
作者单位: | [1]重庆大学光电工程学院,重庆400044 [2]重庆大学光电技术及系统教育部重点实验室,重庆400044 |
| |
摘 要: | 介绍了纳米CMOS器件及其新技术,同时利用安捷伦公司的ADS软件,基于台积电0.18μm的RFCMOS工艺,设计了中心频率为5.2GHz的纳米CMOS低噪声放大器,达到了较好的性能。
|
关 键 词: | 纳米CMOS 射频集成电路 共源共栅 低噪声放大器 |
Research of Nanoscale CMOS Low Noise Amplifier |
| |
Affiliation: | WANG Guo-bo, ZHANG Liu-qiang, XIA Hua-can(1.Opto-electronic College of Chongqing University, Chongqing 400044, China) (2.Opto-electronic Technology and Systems of Chongqing University, Chongqing 400044, China) |
| |
Abstract: | In this paper, nanoscale CMOS devices and technologies are analysised. Based on the TSMC 0.18μm RF CMOS process, a 5.2GHz low noise amplifier was designed use of agilent's software ADS. |
| |
Keywords: | nanoscale CMOS RFIC cascode low-noise amplifier |
本文献已被 维普 等数据库收录! |
|