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Measurements of effective optical reflectivity using a conventional flatbed scanner—Fast assessment of optical layer properties
Authors:L. Korte, S. Bastide,C. L  vy-Cl  ment
Affiliation:aInstitut de Chimie et Matériaux Paris-Est, CNRS-UMR 7182, 2-8 rue Henri Dunant, 94320 Thiais, France;bHahn-Meitner-Institut Berlin GmbH, Department Silicon Photovoltaics, Kekuléstr. 5, 12489 Berlin, Germany
Abstract:A conventional flatbed scanner equipped with an additional diffusor is used for rapid measurements of an important figure of merit for optical surfaces, the effective reflectivity of devices such as solar cells. The application of the technique to multicrystalline silicon wafers with light-trapping structures obtained by electrochemical etching is shown. The use of this method for rapid quality control in production environments as well as in the lab is envisaged: even with a non-optimized diffusor, a spatial resolution of not, vert, similar0.1×0.1 mm2 can be achieved, with an accuracy of the reflectivity measurements of not, vert, similar1% and data-acquisition times around 10 s per wafer.
Keywords:Reflectivity   Scanner   Texturization   Multicrystalline silicon   Solar cells
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