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Q band GaAs Schottky-barrier IMPATT |
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| Authors: | Rodgers J.M. Pomeroy Robina C. |
| Affiliation: | Royal Radar Establishment, Great Malvern, UK; |
| Abstract: | Microwave power at Q band is reported from GaAs Schottky-barrier avalanche diodes. A nickel-contacted epitaxial GaAs structure in a flipped mesa configuration was used. In a Q band waveguide cavity, 0.5 W was obtained at 26.7 GHz using a pulsed voltage source. |
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