一次性烧成晶界层半导体陶瓷电容器

采用一次性烧成技术研制了晶界层半导体陶瓷电容器,在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂,两者在还原烧成时促使晶粒生长并半导化,助烧剂在氧化时有利于晶界绝缘层形成。在一台联体烧成设备中,采用大梯度温度和气氛变化,连续完成还原烧成和氧化处理。还原烧成时,升温速度大于400℃/h。在还原烧成温度下保温后,立即在几分钟内,从还原气氛转到氧化气氛,同时降温300℃以上。整个烧成过程中,瓷体全部是堆烧(叠烧10～20层),生产效率比二次烧成提高10倍以上。

One-time Sintering Technology of the Grain Boundary Layer Semiconductor Ceramic Capacitors

The grain boundary layer semiconductor ceramic capacitors were manufactured by one-time sintering technology. The donor impurity and grain boundary combustion-supporting agent containing acceptor impurity were added successively in the ceramic powder during ceramic powder preparation, both of them can also promote grain growing and semiconductive, and the combustion-supporting agent can be good to form insulation layer in oxidizing process. In one set of joint-body firing furnace, by varying the temperature and atmosphere in great gradient, the reduced sintering and oxidized treatment of the semi-manufactured goods were carried out continuously. For reduced sintering, the speed of ascending temperature was above 400℃/h. After preserving heat in reduced sintering temperature, the goods were turned from reduced sintering atmosphere to oxidized treatment atmosphere in several minutes, at the same time, the temperature was descended above 300℃. In whole sintering process, the ceramic disc body was heap roasted (laminated roasting 10~20 layers). Production efficiency by one–time sintering technology is ten times more than that by two-time sintering.