| THE GROWTH OF MONOCRYSTALLINE SILICON THIN FILM ON INSULATOR (SOI) BY SCANNING ELECTRON BEAM |
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| 作者姓名： | Lin Shichang Zhang Yansheng |
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| 作者单位： | Lin Shichang Zhang Yansheng
(institute of E/ectronics，Academia Sinica，Beijing 100080) Zhang Guobing Wang Yangyuan
(Peking University，Beijing 100871) |
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| 摘 要： | An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.
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The growth of monocrystalline silicon thin film on insulator (SOI) by scanning electron beam |
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| Lin Shichang Zhang Yansheng.THE GROWTH OF MONOCRYSTALLINE SILICON THIN FILM ON INSULATOR (SOI) BY SCANNING ELECTRON BEAM[J].Journal of Electronics,1996,13(2):170-177. |
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| Authors: | Lin Schichang Zhang Yansheng Zhang Guobing Wang Yangyuan |
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| Affiliation: | (1) Institute of Electronics, Academia Sinica, 100080 Beijing;(2) Peking University, 100871 Beijing |
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| Abstract: | An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline
silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction
of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained,
the monocrystalline silicon zone is nearly 200×25μm2. |
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| Keywords: | Monocrystalline silicon film SOI technology Material modification Scanning electron beam |
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