| PECVD法氮化硅薄膜的研究 |
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| 引用本文： | 吴大维,范湘军,郭怀喜,张志宏,李世宁.PECVD法氮化硅薄膜的研究[J].材料科学与工程学报,1997(1). |
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| 作者姓名： | 吴大维 范湘军 郭怀喜 张志宏 李世宁 |
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| 作者单位： | 武汉大学 |
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| 摘 要： | 本文采用射频等离子体增强化学气相生长法（ＰＥＣＶＤ），在单晶硅衬底上生长氮化硅薄膜，经Ｘ射线衍射测试发现，在（１００）晶向硅片上生长的氮化硅薄膜为（１０１）晶向的外延生长膜。还用红外吸收光谱拉曼光谱和Ｘ射线光电子能谱测试了β－Ｓｉ３Ｎ４的特性，讨论了它在微电子学中的应用。
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| 关 键 词： | β－Si_3N_4，PECVD，外延生长 |
The Studies of the Silicon Nitride Films Prepared by Plasma Enhanced Chemical Vapour Deposition(PECVD) |
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| Wu Dawei,Fan Xiangjun,Guo Huaixi,Zhang Zhihong,Li Shining Wuhan University,Wuhan.The Studies of the Silicon Nitride Films Prepared by Plasma Enhanced Chemical Vapour Deposition(PECVD)[J].Journal of Materials Science and Engineering,1997(1). |
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| Authors: | Wu Dawei Fan Xiangjun Guo Huaixi Zhang Zhihong Li Shining Wuhan University Wuhan |
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| Affiliation: | Wu Dawei,Fan Xiangjun,Guo Huaixi,Zhang Zhihong,Li Shining Wuhan University,Wuhan 430072 |
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| Abstract: | The silicon nitride films were deposited by plasma enhanced chemical vapour deposition.The result obtained by X ray diffraction indicated that the nitride silicon grew along(101) orientation on Si(100).In addition.The FTIR.Raman scattering and X ray photoelectron spectra were used to characterize silicon nitride. Its applications in microelectronics are also discussed. |
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