新的二维解析方法预言场限环结构的电压分布和边界峰值电场及环间距的优化

提出了一个新的二维解析方法预言场限环结构的电压分布和边界峰值电场及环间距优化 .采用与平面结物理机理最接近的圆柱坐标对称解进行分析 ,给出了场限环结构极为简单的各电压和边界峰值电场表达式 .讨论了不同环间距和反偏电压对场限环电压的影响 ,并用流行的 2 - D半导体器件模拟工具 MEDICI对解析计算进行了验证 .根据临界电场击穿近似 ,讨论了环间距的优化设计并给出了优化环间距表达式 .在一定结深和掺杂浓度时 ,理论计算给出了与数值分析一致的优化环间距和最高击穿电压值 .

A New Quasi 2-Dimensional Analytical Approach to Predicting RingJunction Voltage,Edge Peak Fields and Optimal Spacing of PlanarJunction with Single Floating Field Limiting Ring Structure

WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.