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On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4H-SiC |
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| Authors: | A. A. Lebedev B. Ya. Ber E. V. Bogdanova N. V. Seredova D. Yu. Kazantsev V. V. Kozlovski |
| Affiliation: | 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 2. Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia |
| Abstract: | Photoluminescence (PL) appearing in p-4H-SiC upon its electron irradiation has been studied. A model that accounts for the dependence of the PL intensity on the irradiation dose is suggested. The conclusion is drawn that nitrogen–radiation defect donor–acceptor pairs are PL activators. |
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