| Abstract: | The basic theory for Recombination Enhanced Defect Reaction (REDR) as responsible for sudden failures in 980 nm SL SQW InGaAs pump laser diodes is here tested on experimental constant-current life-test data. A link between the occurrence of long term sudden failures and early detectable signatures has been looked for. For a specific case, where the reacting defects may display saturation effects on their recombination efficiency, a possible screening method may be proposed, able to individuate the great majority of sudden failures at about 1000 hours by inspecting data at 20 hours. |
